IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

Author(s): Tommaso Brazzini ; Michael A. Casbon ; Michael J. Uren ; Paul J. Tasker ; Helmut Jung ; Herve Blanck ; Martin Kuball
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,155 - 2,160
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2017.2686782
Regular:

Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes.... View More

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