IEEE - Institute of Electrical and Electronics Engineers, Inc. - Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS2

Author(s): Dipankar Saha ; Santanu Mahapatra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,457 - 2,460
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2680453
Regular:

Symmetry of the source-channel and drain-channel junction is a unique property of a metal-oxide-semiconductor field effect transistor (MOSFET), which needs to be preserved while realizing... View More

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