IEEE - Institute of Electrical and Electronics Engineers, Inc. - First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

Author(s): Yongsoo Ahn ; Mincheol Shin
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,129 - 2,134
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2679217
Regular:

We investigate the ballistic performance of monolayer indium selenide (InSe) n-type FETs, benchmarking with monolayer WS2, WSe2, and black phosphorus FETs. We utilize... View More

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