IEEE - Institute of Electrical and Electronics Engineers, Inc. - Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs

Author(s): Corentin Grillet ; Demetrio Logoteta ; Alessandro Cresti ; Marco G. Pala
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,425 - 2,431
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2679226
Regular:

We present a numerical study aimed to benchmark short gate InAs nanowire-FETs (NW-FETs) against their strained Si (sSi) counterpart. Our full-quantum simulations focus on both gate-length scaling... View More

Advertisement