IEEE - Institute of Electrical and Electronics Engineers, Inc. - Variation of Threshold Voltage With Temperature in Impact Ionization-Induced Steep Switching Si and Ge Junctionless MOSFETs

Author(s): Manish Gupta ; Abhinav Kranti
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,061 - 2,066
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2679218
Regular:

In this paper, we report on the anomalous behavior of threshold voltage ( ${V} _{\sf th})$ with temperature in junctionless (JL) transistors. It is shown that both positive and negative values of... View More

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