IEEE - Institute of Electrical and Electronics Engineers, Inc. - Flicker Noise Performance on Thick and Thin Oxide FinFETs

Author(s): Yi Ming Ding ; Durgamadhab Durga Misra ; Purushothaman Srinivasan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,321 - 2,325
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2676979
Regular:

1/f noise was characterized on Fin Field-Effect Transistors (FinFETs) to compare noise performance of CORE and IO devices of a technology node. Thin FinFETs (CORE devices with Equivalent Oxide... View More

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