IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices

Author(s): Youngtaek Lee ; Changhwan Shin
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2017
Volume: 64
Page(s): 2,452 - 2,456
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2673859
Regular:

Using 3-D technology computer aided design simulation, we investigated the impact of equivalent oxide thickness (EOT) on threshold voltage ( ${V}_{{\text {TH}}}$ ) variation induced by... View More

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