IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation

Author(s): Xiao Yu ; Jian Kang ; Mitsuru Takenaka ; Shinichi Takagi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,418 - 1,425
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2662217
Regular:

Mobility degradation factors in ultrathin body (UTB) germanium on insulator (GOI), including the back interfacial quality and the crystal quality, have been experimentally examined and identified.... View More

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