IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

Author(s): Han-Han Lu ; Lu Liu ; Jing-Ping Xu ; Pui-To Lai ; Wing-Man Tang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,535 - 1,540
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2667041
Regular:

GaAs metal-oxide-semiconductor capacitors are fabricated by alternately depositing La oxynitride (LaON)/TiON or TiON/LaON or first depositing a LaON interlayer and then alternately... View More

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