IEEE - Institute of Electrical and Electronics Engineers, Inc. - Accurate Defect Density-of-State Extraction Based on Back-Channel Surface Potential Measurement for Solution-Processed Metal-Oxide Thin-Film Transistors

Author(s): Hwarim Im ; Hyunsoo Song ; Jongjang Park ; Yewon Hong ; Jewook Ha ; Seon-Beom Ji ; Jaewook Jeong ; Yongtaek Hong
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,683 - 1,688
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2664661
Regular:

We report more accurate extraction method of the defect density of states for solution-processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Since the solution-processed... View More

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