IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

Author(s): L. Brunel ; B. Lambert ; D. Carisetti ; Nathalie Malbert ; A. Curutchet ; N. Labat
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,548 - 1,553
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2669368
Regular:

This paper deals with the deep characterization of a novel electrical parasitic effect in AlGaN/GaN technology so called "electrical runaway mechanism." It is characterized by an anomalous gate... View More

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