IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature-Dependent Gate Bias Stress Effect in Dioctylbenzothieno[2,3-b]benzothiophene-Based Thin-Film Transistor

Author(s): Jiawei Wang ; Tianjun Liu ; Yiwei Zhang ; Chao Jiang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,723 - 1,727
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2670020
Regular:

We carried out a systematic research on temperature-dependent bias stress instability for Dioctylbenzothieno[2,3-b]benzothiophene-based organic thin-film transistors (OTFTs)... View More

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