IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

Author(s): Woongje Sung ; B. Jayant Baliga
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,647 - 1,652
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2664051
Regular:

This paper compares five edge termination techniques for SiC high-voltage devices: single zone junction termination extension (JTE), ring assisted-JTE (RA-JTE), multiple floating zone-JTE,... View More

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