IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling

Author(s): Angada B. Sachid ; Min-Cheng Chen ; Chenming Hu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,861 - 1,864
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2664798
Regular:

We fabricate n-channel silicon bulk FinFET with silicon nitride (Si3N4) high-κ, silicon nitride/silicon dioxide dual-κ, and silicon dioxide (SiO2)... View More

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