IEEE - Institute of Electrical and Electronics Engineers, Inc. - Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET

Author(s): Ananda Sankar Chakraborty ; Santanu Mahapatra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,519 - 1,527
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2661798
Regular:

Formulation of accurate yet computationally efficient surface potential equation (SPE) is the fundamental step toward developing compact models for low effective mass channel quantum well MOSFETs.... View More

Advertisement