IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC

Author(s): Mohammad Abdul Alim ; Ali A. Rezazadeh
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2017
Volume: 64
Page(s): 1,511 - 1,518
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2658685
Regular:

Temperature influence on the device behavior has been carried out on AlGaAs/InGaAs/GaAs-based pseudomorphic high-electron mobility transistor fabricated in multilayer 3-D monolithic... View More

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