IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET

Author(s): Yunhe Guan ; Zunchao Li ; Wenhao Zhang ; Yefei Zhang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 938 - 944
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2654248
Regular:

A continuous accurate analytical drain current model considering the effect of the inversion charge is presented for the double-gate heterojunction tunneling FET. The band-to-band tunneling... View More

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