IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs

Author(s): Roberta Stradiotto ; Gregor Pobegen ; Clemens Ostermaier ; Michael Waltl ; Alexander Grill ; Tibor Grasser
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 1,045 - 1,052
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2655367
Regular:

Charge trapping is one of the main reliability issues for GaN-based MIS-high-electron-mobility-transistor technologies. In this paper, we focus on the defects located at or close to the... View More

Advertisement