IEEE - Institute of Electrical and Electronics Engineers, Inc. - Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

Author(s): T. Paul Chow ; Ichiro Omura ; Masataka Higashiwaki ; Hiroshi Kawarada ; Vipindas Pala
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 856 - 873
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2653759
Regular:

We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics... View More

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