IEEE - Institute of Electrical and Electronics Engineers, Inc. - Detailed Study on Dynamic Characteristics of a High-Performance SGT-MOSFET With Under-the-Trench Floating P-Pillar

Author(s): Shengling Deng ; Zia Hossain ; Toshimitsu Taniguchi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 735 - 740
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2658568
Regular:

We proposed a 150 V shielded-gate trench (SGT) power MOSFET with floating P-pillars under the trench and studied its static and dynamic characteristics, especially the transient capacitance and... View More

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