IEEE - Institute of Electrical and Electronics Engineers, Inc. - Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Author(s): Hideyuki Okita ; Masahiro Hikita ; Akihiko Nishio ; Takahiro Sato ; Keiichi Matsunaga ; Hisayoshi Matsuo ; Michinobu Tsuda ; Masaya Mannoh ; Saichiro Kaneko ; Masayuki Kuroda ; Manabu Yanagihara ; Ayanori Ikoshi ; Tatsuo Morita ; Kenichiro Tanaka ; Yasuhiro Uemoto
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 1,026 - 1,031
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2653847
Regular:

A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the... View More

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