IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Author(s): William M. Waller ; Mark Gajda ; Saurabh Pandey ; Johan J. T. M. Donkers ; David Calton ; Jeroen Croon ; Serge Karboyan ; Jan Sonsky ; Michael J. Uren ; Martin Kuball
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 1,197 - 1,202
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2654800
Regular:

Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor... View More

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