IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications

Author(s): Sheikh Aamir Ahsan ; Sudip Ghosh ; Sourabh Khandelwal ; Yogesh Singh Chauhan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 816 - 823
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2654264
Regular:

In this paper, we present a capacitance model for field-plate AlGaN/GaN High Electron Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and cross-coupling... View More

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