IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

Author(s): Hamed Kamrani ; Dominic Jabs ; Vincenzo d'Alessandro ; Niccolo Rinaldi ; Thomas Jacquet ; Cristell Maneux ; Thomas Zimmer ; Klaus Aufinger ; Christoph Jungemann
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 923 - 929
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2653197
Regular:

We present and validate a physics-based model to describe the underlying mechanisms of hot-carrier degradation in bipolar transistors. Our analysis is based on a deterministic solution of the... View More

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