IEEE - Institute of Electrical and Electronics Engineers, Inc. - Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin

Author(s): Matteo Meneghini ; Alessandro Barbato ; Isabella Rossetto ; Andrea Favaron ; Marco Silvestri ; Simone Lavanga ; Haifeng Sun ; Helmut Brech ; Gaudenzio Meneghesso ; Enrico Zanoni
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 1,032 - 1,037
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2654859
Regular:

This paper demonstrates that-for high-electric fields and drain current levels-the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency HEMTs significantly deviate from the... View More

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