IEEE - Institute of Electrical and Electronics Engineers, Inc. - Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTs

Author(s): Sayed Ali Albahrani ; Anthony Parker ; Michael Heimlich
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 998 - 1,006
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2017.2650241
Regular:

Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple,... View More

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