IEEE - Institute of Electrical and Electronics Engineers, Inc. - Buffer Layer Engineering for High ( $\geq 10^{\mathrm {13}}$ cm $^{\mathrm {-2}}$ ) 2-DEG Density in ZnO-Based Heterostructures

Author(s): Md Arif Khan ; Rohit Singh ; Shaibal Mukherjee ; Abhinav Kranti
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 1,015 - 1,019
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2647258
Regular:

In this paper, we report on the prospect of achieving very high values (≥ 1013 cm-2) of 2-D electron gas (2-DEG) density in ZnO-based heterostructures through buffer... View More

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