IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs

Author(s): Arash Salemi ; Hossein Elahipanah ; Carl-Mikael Zetterling ; Mikael Ostling
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2017
Volume: 64
Page(s): 882 - 887
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2631303
Regular:

Geometrical effects on the forward characteristics of high-power bipolar junction transistors are studied. An implantation-free area optimized junction termination is implemented in order to have... View More

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