IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET

Author(s): Pritha Banerjee ; Subir Kumar Sarkar
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 368 - 375
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2643688
Regular:

A 3-D analytical model of a new structure, namely, dual-material triple-gate silicon-on-nothing MOSFET is proposed in this paper. 3-D Poisson's equation with proper boundary conditions was solved... View More

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