IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Author(s): Sachin Yadav ; Kian Hua Tan ; Annie Kumar ; Kian Hui Goh ; Gengchiau Liang ; Soon-Fatt Yoon ; Xiao Gong ; Yee-Chia Yeo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 353 - 360
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2637382
Regular:

Integration of InxGa1-xAs n-MOSFETs and SiyGe1-y p-MOSFETs could be a key to realize future low-power and high-speed logic circuits. In this paper, monolithic... View More

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