IEEE - Institute of Electrical and Electronics Engineers, Inc. - 4H-SiC Trench IGBT With Back-Side n-p-n Collector for Low Turn-OFF Loss

Author(s): Yan-Juan Liu ; Ying Wang ; Yue Hao ; Cheng-Hao Yu ; Fei Cao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 488 - 493
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2639548
Regular:

In this paper, an n-p-n collector incorporated in the back side of a 4H-SiC trench IGBT is presented to reduce the turn-off energy loss. A comparative study between the proposed structure and the... View More

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