IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7-nm Node

Author(s): Jun-Sik Yoon ; Kihyun Kim ; Taiuk Rim ; Chang-Ki Baek
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 339 - 345
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2633970
Regular:

DC/AC performance and the variations due to single interface trap of the nanowire (NW) FETs were investigated in the 7-nm technology node using fully calibrated TCAD simulation. Shorter junction... View More

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