IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications

Author(s): Pravin N. Kondekar ; Kaushal Nigam ; Sunil Pandey ; Dheeraj Sharma
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 412 - 418
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2637638
Regular:

In this paper, we investigate a polarity controlled electrically doped tunnel FET (ED-TFET) based on the bandgap engineering for analog/RF applications. The proposed device exhibits a heavily... View More

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