IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET

Author(s): Sheng Luo ; Kai-Tak Lam ; Baokai Wang ; Chuang-Han Hsu ; Wen Huang ; Liang-Zi Yao ; Arun Bansil ; Hsin Lin ; Gengchiau Liang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 579 - 586
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2635690
Regular:

Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials,... View More

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