IEEE - Institute of Electrical and Electronics Engineers, Inc. - Laser Spike Annealing for Shallow Junctions in Ge CMOS

Author(s): William Hsu ; Feng Wen ; Xiaoru Wang ; Yun Wang ; Andrei Dolocan ; Anupam Roy ; Taegon Kim ; Emanuel Tutuc ; Sanjay K. Banerjee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2017
Volume: 64
Page(s): 346 - 352
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2635625
Regular:

An annealing method capable of forming highly activated shallow junctions in Ge CMOS is still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to... View More

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