IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs

Author(s): Uppili S. Raghunathan ; Hanbin Ying ; Brian R. Wier ; Anup P. Omprakash ; Partha S. Chakraborty ; Tikurete G. Bantu ; Hiroshi Yasuda ; Philip Menz ; John D. Cressler
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2017
Volume: 64
Page(s): 37 - 44
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2631982
Regular:

This paper examines the fundamental reliability differences between n-p-n and p-n-p SiGe HBTs. The device profile, hot carrier transport, and oxide interface differences between the two device... View More

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