IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of the Meyer-Neldel Rule Based on a Temperature-Dependent Model for Thin-Film Transistors

Author(s): Zhiyuan Han ; Mingxiang Wang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2017
Volume: 64
Page(s): 145 - 152
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2623764
Regular:

Based on the Pao-Sah model and considering the double exponential distribution of traps density of states (DOS) in the bandgap, a unified drain current model is derived for thin-film transistors... View More

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