IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Improved Analytical Model for Carrier Multiplication Near Breakdown in Diodes

Author(s): Raymond J. E. Hueting ; Anco Heringa ; Boni K. Boksteen ; Satadal Dutta ; Alessandro Ferrara ; Vishal Agarwal ; Anne Johan Annema
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2017
Volume: 64
Page(s): 264 - 270
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2630083
Regular:

The charge carrier contributions to impact ionization and avalanche multiplication are analyzed in detail. A closed-form analytical model is derived for the ionization current before the onset of... View More

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