IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Mg x Zn1- x O Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass Photodetectors

Author(s): Jun-Dar Hwang ; Guan-Syun Lin ; Sheng-Beng Hwang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2017
Volume: 64
Page(s): 195 - 199
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2628727
Regular:

A metal-semiconductor-metal photodetector (PD) whose detection wavelength can be modulated was fabricated using a MgxZn1-xO/ZnO bilayer. By varying the... View More

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