IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness

Author(s): Jun Z. Huang ; Pengyu Long ; Michael Povolotskyi ; Gerhard Klimeck ; Mark J. W. Rodwell
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2017
Volume: 64
Page(s): 96 - 101
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2624744
Regular:

GaSb/InAs heterojunction tunnel FETs are strong candidates in building future low-power ICs, as they could provide both steep subthreshold swing and large on-state current (ION).... View More

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