IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Author(s): Liang Zhou ; Zheng Wei San ; Yu-Jie Hua ; Liang Lin ; Shuo Zhang ; Zheng Guo Zhao ; Hai Jing Zhou ; Wen-Yan Yin
Sponsor(s): IEEE Electromagnetic Compatibility Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Volume: 59
Page(s): 902 - 909
ISSN (Paper): 0018-9375
ISSN (Online): 1558-187X
DOI: 10.1109/TEMC.2016.2628046
Regular:

This study aims at studying thermal and stress breakdown of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a high-power microwave (HPM) pulse injected. A thermal... View More

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