IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases

Author(s): Lionel Trojman
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2016
Volume: 14
Page(s): 4,235 - 4,240
ISSN (Paper): 1548-0992
DOI: 10.1109/TLA.2016.7786299
Regular:

In this work the variation of the FDSOI-UTTB p-MOS mobility is studied for different biases of the buried oxide. Two dielectrics are considered: HfO2 (high-k) with 8A-EOT and a SiON... View More

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