IEEE - Institute of Electrical and Electronics Engineers, Inc. - Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory

Author(s): Bosen Zhang ; Cong Hu ; Tianshuang Ren ; Bo Wang ; Jing Qi ; Qing Zhang ; Jian-Guo Zheng ; Yan Xin ; Jianlin Liu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2016
Volume: 63
Page(s): 3,508 - 3,513
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2016.2589272
Regular:

Write-once-read-many-times memory (WORM) devices were fabricated using ZnO and ZnO/MgO as active layers on Si. Devices fabricated with ZnO show a different memory effect at different... View More

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