IEEE - Institute of Electrical and Electronics Engineers, Inc. - Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO2/Pt Devices Dependent on the Electroforming Polarity

Author(s): Yan Li ; Xuexue Pan ; Yong Zhang ; Xinman Chen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2015
Volume: 36
Page(s): 1,149 - 1,152
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2015.2477421
Regular:

In this letter, we report the dependence of memory characteristics on electroforming polarity based on TiN/HfO2/Pt devices. Bipolar resistive switching (BRS) and... View More

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