IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

Author(s): Yu-Hsuan Hsiao ; Meng-Lin Tsai ; Jr-Hau He
Sponsor(s): IEEE Industry Applications Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2015
Volume: 51
Page(s): 1,277 - 1,283
ISSN (Electronic): 1939-9367
ISSN (Paper): 0093-9994
DOI: 10.1109/TIA.2014.2360984
Regular:

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain... View More

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