IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

Author(s): Enrique A. Carrion ; Andrey Y. Serov ; Sharnali Islam ; Ashkan Behnam ; Akshay Malik ; Feng Xiong ; Massimiliano Bianchi ; Roman Sordan ; Eric Pop
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2014
Volume: 61
Page(s): 1,583 - 1,589
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2014.2309651
Regular:

We measure top-gated graphene field-effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-κ dielectric or graphene imperfections, the drain current... View More

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