Ion Implantation Damage Effects in Silicon

Author(s): David E. Eberle
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1970
Volume: 17
Page(s): 150 - 153
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1970.4325782



In order to utilize ion implantation to the best advantage, lattice damage accompanying the process must be repaired, generally by annealing. Accordingly, optical reflection spectroscopy can be a valuable tool for observing the damage and studying the annealing of the damage. The motivation for understanding the implantation process is based on the fact that this process is not just a laboratory curiosity, but represents a device fabrication process that is superior in some cases to diffusion techniques.