IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaN-Based Light-Emitting Diodes With a Sawtooth-Shaped Sidewall on Sapphire Substrate

Author(s): Chun-Min Lin ; Chia-Feng Lin ; Bing-Cheng Shieh ; Tzu-Yun Yu ; Sih-Han Chen ; Peng-Han Tsai ; Kuei-Ting Chen ; Jing-Jie Dai ; Tzong-Liang Tsai
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 24
Page(s): 1,133 - 1,135
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/LPT.2012.2196511
Regular:

An InGaN light-emitting diode (LED) with a cone-shaped GaN structure and a sawtooth-shaped sapphire sidewall structure was fabricated through a laser-drilling process. The fabricated procedures... View More

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