IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Density Metal–Metal Interconnect Bonding for 3-D Integration

Author(s): J. M. Lannon ; C. Gregory ; M. Lueck ; J. D. Reed ; C. A. Huffman ; D. Temple
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2012
Volume: 2
Page Count: 8
Page(s): 71 - 78
ISSN (Paper): 2156-3950
ISSN (Online): 2156-3985
DOI: 10.1109/TCPMT.2011.2175922
Regular:

3-D integration provides a pathway to achieve high performance microsystems through bonding and interconnection of best-of-breed materials and devices. Bonding of device layers can be accomplished... View More

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