IEEE - Institute of Electrical and Electronics Engineers, Inc. - Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage

Author(s): Christopher G. Bailey ; David V. Forbes ; Stephen J. Polly ; Zachary S. Bittner ; Yushuai Dai ; Chelsea Mackos ; Ryne P. Raffaelle ; Seth M. Hubbard
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 2
Page(s): 269 - 275
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2012.2189047
Regular:

Ten-, 20-, and 40-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with a baseline GaAs p-i-n solar cell. Proper strain balancing and a reduction of InAs coverage... View More

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